Metal interconnect structures and methods thereof

A method of manufacturing a semiconductor device, comprising:

• forming a first metallization layer of a plurality of metallization layers disposed vertically respect to a substrate;
• forming a first metal line in the first metallization layer;
• forming a first metal via over the first metal line in the first metallization layer;
• forming a second metallization layer of the plurality of metallization layers over the first metallization layer;
• forming a second metal line in the second metallization layer;
• and
• forming a second metal via over the second metal line in the second metallization layer,
• wherein the first metal line, the first metal via, the second metal line, and the second metal via each essentially consist of a first material comprising copper (Cu), silver (Ag), and carbon (C).