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US 12,660,593 B2Granted
Interconnect structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShin-Yi Yang, Ming-Han Lee, Shau-Lin Shue
Life of this patent
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Abstract
A interconnect structure includes a lower metal, a dielectric layer, an upper metal, and a graphene layer. The dielectric layer laterally surrounds the lower metal. The upper metal is over the lower metal. The graphene layer is over a top surface of the upper metal and opposite side surfaces of the upper metal from a cross-sectional view.
Claims20
An interconnect structure, comprising:
- a substrate;
- a conductive via over the substrate;
- a conductive line over the conductive via;
- a first graphene layer spacing the conductive line apart from the conductive via;
- a second graphene layer wrapping the conductive line;
- and
- a barrier layer cupping an underside of the conductive via and in contact with the first and second graphene layers.
4 more elements
An interconnect structure, comprising:
- a first metal in a first dielectric layer;
- a second metal over the first metal;
- a metal nitride layer extending from a first edge of a bottom surface of the second metal, along sidewalls of the first metal, to a second edge of the bottom surface of the second metal opposite to the first edge from a cross-sectional view;
- and
- a first graphene layer cupping a topside of the second metal.
2 more elements
An interconnect structure, comprising:
- a lower metal;
- a first dielectric layer laterally surrounding the lower metal;
- an upper metal over the lower metal;
- a graphene layer over a top surface of the upper metal and opposite side surfaces of the upper metal from a cross-sectional view;
- and
- a metal nitride layer cupping an underside of the lower metal, wherein the metal nitride layer further extends to a top surface of the first dielectric layer and in contact with the graphene layer.
3 more elements
Dependencies are inferred from the claim text.