Interconnect structure including anisotropic transport material and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCian-Yu CHEN, Meng-Pei LU, Shin-Yi YANG
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Abstract
A semiconductor device includes a substrate, and an interconnect structure disposed over the substrate. The interconnect structure includes a first conductive interconnect serving as a contact via, and a second conductive interconnect connected to the first conductive interconnect and serving a metal line. The second conductive interconnect includes a plurality of anisotropic transport material films extending in a lengthwise direction of the second conductive interconnect.
Claims20
A semiconductor device, comprising:
- a substrate;
- and
- an interconnect structure disposed over the substrate, and including:
- a first conductive interconnect serving as a contact via, and
- a second conductive interconnect connected to the first conductive interconnect and serving a metal line, the second conductive interconnect including a plurality of anisotropic transport material films extending in a lengthwise direction of the second conductive interconnect.
A semiconductor device, comprising:
- a substrate;
- and
- an interconnect structure disposed over the substrate, and including:
- a first conductive interconnect serving as a contact via, the first conductive interconnect including a first conductive bulk region, and
- a second conductive interconnect connected to the first conductive interconnect and serving as a metal line, the second conductive interconnect including a second conductive bulk region,
- wherein the first conductive bulk region includes a plurality of first anisotropic transport material films extending in a heightwise direction of the first conductive interconnect, or the second conductive bulk region includes the plurality of first anisotropic transport material films extending in a lengthwise direction of the second conductive interconnect.
A method for manufacturing a semiconductor device, comprising:
- forming a first conductive interconnect over a substrate, the first conductive interconnect serving a contact via and including a first conductive bulk region;
- and
- forming a second conductive interconnect connected to the first conductive interconnect, the second conductive interconnect serving as a metal line and including a second conductive bulk region, at least one of the first conductive bulk region and the second conductive bulk region being formed from a plurality of first anisotropic transport material films.
Dependencies are inferred from the claim text.