US 12,757,708 B2 · Integrated circuit (IC) device with hybrid metal layer

Abstract

An IC device includes a transistor, a first layer, and a second layer. The first layer is coupled to the transistors and is between the transistor and the second layer in a first direction. The first layer includes a first structure and a second structure. The first structure includes a first metal (e.g., Ru). The second structure includes a second metal (e.g., Cu). The second structure may be wrapped around by a different material that may include a third metal (e.g., Co). The first structure may be shorter than the second structure in the first direction and narrower than the second structure in a second direction orthogonal to the first direction. The first structure may be closer to the second layer than the second structure in the first direction. The first structure may be a wordline of a memory. The second structure may be a bitline.

Claims20

Dependent claims

An integrated circuit (IC) device, comprising:

a first structure comprising a first metal;
a second structure comprising a second metal, wherein the second metal is different from the first metal;
a third structure wrapping around at least part of the second structure;
and
a fourth structure over the second structure in a first direction,
wherein:
the first structure is coupled to a source region or a drain region of a transistor,
the second structure is coupled to a channel region of the transistor,
the third structure and the fourth structure comprise an electrically conductive material,
a height of the second structure in the first direction is greater than a height of the first structure in the first direction, and
a width of the second structure in a second direction orthogonal to the first direction is greater than a height of the first structure in the second direction.

8 more elements

Dependencies are inferred from the claim text.

Integrated circuit (IC) device with hybrid metal layer

Life of this patent

Integrated circuit (IC) device with hybrid metal layer

Life of this patent

Abstract

Claims20