H10W 20/4437
The principal metal being a transition metal
Official title: {the principal metal being a transition metal}
H10W20/4437 (The principal metal being a transition metal) appears on 1,769 US grants and 1,948 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,769
- Published applications
- 1,948
- Assignees
- 273
- Inventors
- 3,133
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 5 | 0 |
| 1987 | 6 | 0 |
| 1988 | 6 | 0 |
| 1989 | 4 | 0 |
| 1990 | 8 | 0 |
| 1991 | 9 | 0 |
| 1992 | 9 | 0 |
| 1993 | 6 | 0 |
| 1994 | 9 | 0 |
| 1995 | 11 | 0 |
| 1996 | 8 | 0 |
| 1997 | 16 | 0 |
| 1998 | 12 | 0 |
| 1999 | 11 | 0 |
| 2000 | 20 | 0 |
| 2001 | 13 | 9 |
| 2002 | 17 | 18 |
| 2003 | 16 | 13 |
| 2004 | 8 | 4 |
| 2005 | 5 | 7 |
| 2006 | 4 | 6 |
| 2007 | 6 | 1 |
| 2008 | 2 | 8 |
| 2009 | 5 | 7 |
| 2010 | 3 | 14 |
| 2011 | 10 | 9 |
| 2012 | 3 | 13 |
| 2013 | 10 | 18 |
| 2014 | 25 | 44 |
| 2015 | 44 | 84 |
| 2016 | 88 | 102 |
| 2017 | 149 | 155 |
| 2018 | 162 | 191 |
| 2019 | 153 | 212 |
| 2020 | 211 | 197 |
| 2021 | 152 | 179 |
| 2022 | 129 | 168 |
| 2023 | 114 | 177 |
| 2024 | 119 | 115 |
| 2025 | 119 | 116 |
| 2026 | 54 | 81 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor structure and manufacturing method thereof29 Sep 2026US 12,751,258 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Metallization stack and method of manufacturing the same, and electronic device including metallization stack29 Sep 2026US 12,751,275 B2Institute of Microelectronics, Chinese Academy of Sciences
- Interconnect structure and electronic device including the same29 Sep 2026US 12,751,281 B2Samsung Electronics Co., Ltd.
- Semiconductor transistor structure and fabrication method thereof22 Sep 2026US 12,745,443 B2United Microelectronics Corp.
- Interconnect structure and method of forming same15 Sep 2026US 12,734,368 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect structure and method of forming same8 Oct 2026US 2026/0306859 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Metal structures with seams8 Oct 2026US 2026/0314358 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Processing solution, method for processing semiconductor substrate, and method for manufacturing semiconductor device1 Oct 2026US 2026/0297465 A1Tokyo Ohka Kogyo.Co., Ltd.
- Increased thermal conductivity of semi-damascene metal wiring1 Oct 2026US 2026/0305291 A1International Business Machines Corporation
- Apparatus including cell contact and redistribution layer structure1 Oct 2026US 2026/0305313 A1Micron Technology, Inc.
Most cited
By later US patents
- Method of producing titanium nitride MOS device gate electrode640US 4,570,328 AMotorola, Inc. · 1986
- Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology532US 7,235,482 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2007
- Contact structure and memory element incorporating the same477US 6,031,287 AMicron Technology, Inc. · 2000
- Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device326US 6,139,700 ASamsung Electronics Co., Ltd. · 2000
- Surface mountable integrated circuit with conductive vias206US 5,608,264 AHarris Corporation · 1997