Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device

An apparatus used in fabricating a metal interconnection in a semiconductor device, the semiconductor device having an ohmic contact layer and a metal barrier layer sequentially formed within a contact hole etched in an insulating layer formed on a semiconductor substrate, the apparatus comprising:

• a transfer chamber;
• a load lock chamber for loading and unloading a wafer into the transfer chamber;
• a first process chamber, for forming the ohmic contact layer on the wafer, connected to the transfer chamber;
• a second process chamber, for forming a protective layer on the ohmic contact layer, connected to the transfer chamber;
• and
• a third process chamber, for forming the metal barrier layer on the protective layer, connected to the transfer chamber;
• wherein the third process chamber is one selected from the group consisting of an atomic layer deposition (ALD)-titanium nitride (TiN) chamber and an atomic layer deposition (ALD)-tungsten nitride (WN) chamber.