Processing solution, method for processing semiconductor substrate, and method for manufacturing semiconductor device

A processing solution comprising:

• (A) an oxidizing agent;
• (B) a compound capable of releasing a fluoride ion;
• (C) at least one selected from the group consisting of a nitrogen atom-containing heterocyclic ring-containing compound and a salt thereof as a first corrosion inhibitor;
• (D) at least one selected from the group consisting of an amine compound (1) having a structure represented by Formula (1) and a salt thereof as a second corrosion inhibitor;
• and
• water,
• wherein a content amount of (B) the compound capable of releasing a fluoride ion is 0.005 to 1 mass %, and
• a content amount of (C) the first corrosion inhibitor is 0.01 to 1 mass %,
• NR1R2R3 (1)
• (wherein R1, R2, and R3 each independently represent a hydrogen atom, an alkyl group, or an alkyl group having an organic group, provided that at least one of R1, R2, and R3 represents an alkyl group having 8 or more carbon atoms or an alkyl group having 8 or more carbon atoms and having an organic group).