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US 2026/0314358 A1Published application
Metal structures with seams
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHao Yang, Sung-Hsun Wu, Neng-Jye Yang, Jye-Yen Cheng
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Abstract
Devices with metal structures formed with seams and methods of fabrication are provided. An exemplary method includes forming a metal plug having a top surface formed with a seam; depositing a film over the top surface of the metal plug and at least partially filling the seam; and etching the film from over the metal plug, wherein the film remains in the seam.
Claims20
A semiconductor device comprising:
- a dielectric layer having an uppermost surface;
- a first metal structure located in the dielectric layer over a metal gate, the first metal structure having a first top surface terminating at a first lateral sidewall and a first seam extending from a first opening in the first top surface into the first metal structure;
- a second metal structure located in the dielectric layer over a metal contact, the second metal structure having a second top surface terminating at a second lateral sidewall and a second seam extending from a second opening in the second top surface into the second metal structure;
- a first cap located in the first seam and completely filling the first seam;
- a second cap located in the second seam and partially filling the second seam, an air gap being enclosed in the second seam between the second cap and a bottom of the second seam;
- a first conductive interconnect located over the first metal structure and the first cap;
- and
- a second conductive interconnect located over the second metal structure and the second cap.
5 more elements
A metal interconnect comprising:
- a dielectric layer having an uppermost surface;
- a metal structure located in the dielectric layer, the metal structure having a top surface located above the uppermost surface of the dielectric layer and terminating at a lateral sidewall, the metal structure having a seam extending from an opening in the top surface into the metal structure for a seam depth;
- a liner located on a portion of the lateral sidewall located above the uppermost surface of the dielectric layer;
- a cap located in the seam and contacting an internal sidewall of the seam at the opening, an air gap being enclosed in the seam between the cap and a bottom of the seam, the liner and the cap being formed of a same material;
- and
- a conductive interconnect located over the metal structure and the cap.
3 more elements
A method for fabricating a semiconductor device, comprising:
- forming a metal structure in a dielectric layer, the metal structure having a top surface formed with a seam, the seam extending from an opening in the top surface into the metal structure for a seam depth defined as a vertical distance from a deepest point in the seam to the top surface;
- depositing a film over the top surface of the metal structure and filling the seam;
- and
- removing the film from over the metal structure to uncover the top surface, a remaining portion of the film remaining in the seam and completely filling the seam such that the remaining portion of the film has a vertical height equal to the seam depth, the remaining portion of the film being free of an air gap.
1 more element
Dependencies are inferred from the claim text.