H10W 20/4451
Semiconductor materials
Official title: {Semiconductor materials, e.g. polysilicon}
H10W20/4451 (Semiconductor materials) appears on 718 US grants and 537 published applications in this corpus.
Search patents in H10W- Granted patents
- 718
- Published applications
- 537
- Assignees
- 164
- Inventors
- 1,368
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 8 | 0 |
| 1979 | 3 | 0 |
| 1980 | 6 | 0 |
| 1981 | 4 | 0 |
| 1982 | 5 | 0 |
| 1983 | 6 | 0 |
| 1984 | 4 | 0 |
| 1985 | 13 | 0 |
| 1986 | 9 | 0 |
| 1987 | 12 | 0 |
| 1988 | 7 | 0 |
| 1989 | 9 | 0 |
| 1990 | 14 | 0 |
| 1991 | 29 | 0 |
| 1992 | 18 | 0 |
| 1993 | 19 | 0 |
| 1994 | 14 | 0 |
| 1995 | 12 | 0 |
| 1996 | 10 | 0 |
| 1997 | 17 | 0 |
| 1998 | 9 | 0 |
| 1999 | 3 | 0 |
| 2000 | 9 | 0 |
| 2001 | 4 | 1 |
| 2002 | 11 | 5 |
| 2003 | 5 | 2 |
| 2004 | 2 | 0 |
| 2005 | 1 | 4 |
| 2006 | 2 | 3 |
| 2007 | 3 | 5 |
| 2008 | 1 | 7 |
| 2009 | 3 | 10 |
| 2010 | 9 | 7 |
| 2011 | 6 | 4 |
| 2012 | 3 | 7 |
| 2013 | 7 | 10 |
| 2014 | 12 | 21 |
| 2015 | 28 | 34 |
| 2016 | 37 | 49 |
| 2017 | 50 | 52 |
| 2018 | 36 | 37 |
| 2019 | 47 | 59 |
| 2020 | 50 | 49 |
| 2021 | 40 | 35 |
| 2022 | 26 | 26 |
| 2023 | 30 | 36 |
| 2024 | 27 | 24 |
| 2025 | 33 | 31 |
| 2026 | 3 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Thermal cycle detectors15 Sep 2026US 12,736,413 B2Analog Devices International Unlimited Company
- Semiconductor device with capping layer and method for fabricating the same21 Jul 2026US 12,690,256 B2Nanya Technology Corporation
- Semiconductor structure and method for fabricating same13 Jan 2026US 12,525,452 B2Changxin Memory Technologies, Inc.
- Semiconductor device including three-dimensional memory cells23 Dec 2025US 12,506,072 B2SK hynix Inc.
- Semiconductor device with capping layer16 Dec 2025US 12,501,686 B2Nanya Technology Corporation
- Apparatus including cell contact and redistribution layer structure1 Oct 2026US 2026/0305313 A1Micron Technology, Inc.
- Semiconductor device and method for fabricating the same24 Sep 2026US 2026/0293110 A1SK hynix Inc.
- Semiconductor device and method for fabricating the same24 Sep 2026US 2026/0293124 A1SK hynix Inc.
- Laminated structure including metal silicide, method of manufacturing the same, and semiconductor device including the laminated structure24 Sep 2026US 2026/0293268 A1Samsung Electronics Co., Ltd.
- Peripheral memory word line structure17 Sep 2026US 2026/0282345 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method for maximizing air gap in back end of the line interconnect through via landing modification318US 9,837,355 B2International Business Machines Corporation · 2017
- Self-aligning contact and interconnect structure124US 5,656,861 AParadigm Technology, Inc. · 1997
- Plug contact with antifuse121US 5,233,217 ACrosspoint Solutions, Inc. · 1993
- Semiconductor device containing conductor plug that can reduce contact resistance121US 5,641,991 ANEC Corporation · 1997
- Doped polysilicon silicide semiconductor integrated circuit interconnections110US 4,329,706 AInternational Business Machines Corporation · 1982