Semiconductor device with capping layer
AssigneeNanya Technology Corporation
InventorTse-Yao Huang
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a capping mask layer positioned on the substrate; a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and including a U-shaped cross-sectional profile; a first work function layer positioned on the first gate insulating layer; a first conductive layer positioned on the first work function layer; and a first capping layer positioned on the first conductive layer. The first capping layer includes germanium oxide. A top surface of the first capping layer and a top surface of the capping mask layer are substantially coplanar.
Claims11
A semiconductor device, comprising:
- a substrate;
- a capping mask layer positioned on the substrate, wherein a trench is formed at the capping mask layer and is extended into the substrate;
- a first gate insulating layer positioned along the capping mask layer, inwardly positioned in the substrate, and comprising a U-shaped cross-sectional profile, wherein the first gate insulating layer is conformally formed in the trench;
- a first work function layer positioned on the first gate insulating layer and below the capping mask layer;
- a first conductive layer positioned on the first work function layer and below the capping mask layer;
- and
- a first capping layer positioned on the first conductive layer;
- wherein the first capping layer comprises germanium oxide;
- wherein a top surface of the first capping layer and a top surface of the capping mask layer are substantially coplanar;
- wherein the first gate insulating layer, the first work function layer, the first conductive layer, and the first capping layer configure as a gate structure.
Dependencies are inferred from the claim text.