Laminated structure including metal silicide, method of manufacturing the same, and semiconductor device including the laminated structure
AssigneesSamsung Electronics Co., Ltd., University-Industry Cooperation Group of Kyung Hee University
InventorsHaeryong KIM, Woojin JEON, Byunghoon NA, Woonghyeon PARK, Jeonghyeon PARK, Jaeho LEE, Yoonah CHOI
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Abstract
Provided are a laminated structure including a metal silicide, a method of manufacturing the laminated structure, and a semiconductor device including the laminated structure. The laminated structure includes an amorphous silicon layer, a metal silicide layer provided on the amorphous silicon layer, and a metal nitride layer provided on the metal silicide layer.
Claims20
A laminated structure comprising:
- an amorphous silicon layer;
- a metal silicide layer on the amorphous silicon layer;
- and
- a metal nitride layer on the metal silicide layer such that the metal silicide layer is between the metal nitride layer and the amorphous silicon layer.
A method of manufacturing a laminated structure, the method comprising:
- depositing an amorphous silicon layer on a first material layer;
- depositing a metal layer on the amorphous silicon layer;
- depositing a metal nitride layer on the metal layer;
- and
- forming a metal silicide layer between the amorphous silicon layer and the metal nitride layer by forming a compound of a metal of the metal layer and silicon of the amorphous silicon layer using a heat treatment process.
A semiconductor device comprising:
- a semiconductor layer comprising silicon;
- an amorphous silicon layer on the semiconductor layer;
- a metal silicide layer on the amorphous silicon layer;
- a metal nitride layer on the metal silicide layer such that the metal silicide layer is between the metal nitride layer and the amorphous silicon layer;
- and
- a metal layer on the metal nitride layer such that the metal nitride layer is between the metal layer and the metal silicide layer.
Dependencies are inferred from the claim text.