Semiconductor device and method for fabricating the same

Abstract

Disclosed are a semiconductor device capable of preventing a defect caused by a plasma-induced damage, and a method for fabricating the semiconductor device. The semiconductor device includes: a dummy gate structure including a dummy gate dielectric layer and a dummy gate electrode, which are disposed over a scribe lane region of a substrate; a first contact penetrating the dummy gate dielectric layer to contact the dummy gate electrode and the substrate; an inter-layer dielectric layer disposed over the dummy gate structure; a metal interconnection disposed over the inter-layer dielectric layer; and a second contact penetrating the inter-layer dielectric layer to electrically connect the gate electrode and the metal interconnection.

Dependencies are inferred from the claim text.