H10W 20/42
Vias
Official title: Vias, e.g. via plugs
H10W20/42 (Vias) appears on 11,818 US grants and 14,278 published applications in this corpus.
Search patents in H10W- Granted patents
- 11,818
- Published applications
- 14,278
- Assignees
- 864
- Inventors
- 14,258
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 4 | 0 |
| 1984 | 1 | 0 |
| 1985 | 5 | 0 |
| 1986 | 2 | 0 |
| 1987 | 6 | 0 |
| 1988 | 5 | 0 |
| 1989 | 4 | 0 |
| 1990 | 13 | 0 |
| 1991 | 17 | 0 |
| 1992 | 26 | 0 |
| 1993 | 27 | 0 |
| 1994 | 31 | 0 |
| 1995 | 39 | 0 |
| 1996 | 33 | 0 |
| 1997 | 38 | 0 |
| 1998 | 76 | 0 |
| 1999 | 101 | 0 |
| 2000 | 103 | 0 |
| 2001 | 99 | 52 |
| 2002 | 115 | 119 |
| 2003 | 99 | 98 |
| 2004 | 110 | 129 |
| 2005 | 71 | 114 |
| 2006 | 88 | 96 |
| 2007 | 71 | 112 |
| 2008 | 64 | 118 |
| 2009 | 72 | 130 |
| 2010 | 84 | 169 |
| 2011 | 135 | 129 |
| 2012 | 133 | 156 |
| 2013 | 126 | 219 |
| 2014 | 259 | 386 |
| 2015 | 371 | 613 |
| 2016 | 617 | 644 |
| 2017 | 799 | 845 |
| 2018 | 788 | 760 |
| 2019 | 829 | 973 |
| 2020 | 967 | 1229 |
| 2021 | 942 | 1247 |
| 2022 | 878 | 1261 |
| 2023 | 920 | 1259 |
| 2024 | 994 | 1362 |
| 2025 | 1041 | 1261 |
| 2026 | 603 | 797 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory cell with reduced parasitic capacitance and conductive via extending into source/drain region6 Oct 2026US 12,757,383 B2Nanya Technology Corporation
- Memory cell with reduced parasitic capacitance and spacer between u-shaped liner and air gap6 Oct 2026US 12,757,384 B2Nanya Technology Corporation
- Three-dimensional semiconductor memory device, electronic system including the same, and method of fabricating the same6 Oct 2026US 12,757,402 B2Samsung Electronics Co., Ltd.
- Electrostatic discharge path for preventing plasma-induced damage during patterning of phase change material and method for forming the same6 Oct 2026US 12,757,643 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,688 B2SK hynix Inc.
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices and methods of fabricating the same8 Oct 2026US 2026/0313865 A1Samsung Electronics Co., Ltd.
- Memory device with alternating metal lines8 Oct 2026US 2026/0313866 A1Taiwan Semiconductor Manufacturing Company.Ltd
- FINFET Devices with Backside Power Rail and Backside Self-Aligned Via8 Oct 2026US 2026/0313945 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Dummy structure for chip-on-wafer-on-substrate961US 9,425,126 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias532US 5,414,221 AIntel Corporation · 1995
- Methods of forming wiring structures492US 9,281,277 B2Samsung Electronics Co., Ltd. · 2016
- Contact structure and memory element incorporating the same477US 6,031,287 AMicron Technology, Inc. · 2000