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US 12,757,688 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorJae Ho Kim
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a test circuit in a cross area of a scribe lane area disposed between chip areas of a substrate. The method also includes forming a first dummy structure on the test circuit, forming a test pad in a line area of the scribe lane area of the substrate, and cutting the substrate along the scribe lane area.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a test circuit in a cross area of a scribe lane area disposed between chip areas of a substrate;
- forming a first dummy structure on the test circuit, wherein the first dummy structure comprises at least one dummy conductive pattern extending in a first direction and in a second direction that intersects the first direction, a dummy stack disposed on the at least one dummy conductive pattern and extending in the same direction as the at least one dummy conductive pattern and including alternately stacked first material layers and second material layers, and a dummy contact plug disposed on the at least one dummy conductive pattern and penetrating the dummy stack in a stacking direction;
- forming a first contact plug that penetrates the at least one dummy conductive pattern and that is electrically connected to the test circuit;
- forming a second contact plug that penetrates the dummy stack and that is electrically connected to the first contact plug;
- forming a test pad in a line area of the scribe lane area of the substrate;
- and
- cutting the substrate along the scribe lane area.
4 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a test circuit in a cross area of a scribe lane area disposed between chip areas of a substrate;
- forming a dummy conductive layer over the test circuit;
- forming at least one dummy conductive pattern by etching the dummy conductive layer;
- forming a first contact plug that penetrates the at least one dummy conductive pattern and that is electrically connected to the test circuit;
- forming a dummy stack on the dummy conductive pattern by alternately stacking first material layers and second material layers;
- forming a dummy contact plug on the dummy conductive pattern, the dummy contact plug penetrating the dummy stack in a stacking direction;
- forming a second contact plug that penetrates the dummy stack and that is electrically connected to the first contact plug;
- forming a test pad in a line area of the scribe lane area of the substrate;
- and
- cutting the substrate along the scribe lane area.
7 more elements
Dependencies are inferred from the claim text.