G11C 13/0069
Writing or programming circuits or methods
Official title: {Writing or programming circuits or methods}
G11C13/0069 (Writing or programming circuits or methods) appears on 5,661 US grants and 6,031 published applications in this corpus.
Search patents in G11C- Granted patents
- 5,661
- Published applications
- 6,031
- Assignees
- 591
- Inventors
- 4,999
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 4 | 0 |
| 2000 | 5 | 0 |
| 2001 | 2 | 1 |
| 2002 | 5 | 3 |
| 2003 | 8 | 29 |
| 2004 | 21 | 52 |
| 2005 | 31 | 62 |
| 2006 | 63 | 110 |
| 2007 | 69 | 124 |
| 2008 | 88 | 185 |
| 2009 | 99 | 209 |
| 2010 | 185 | 270 |
| 2011 | 249 | 283 |
| 2012 | 255 | 292 |
| 2013 | 299 | 297 |
| 2014 | 358 | 419 |
| 2015 | 429 | 357 |
| 2016 | 464 | 401 |
| 2017 | 432 | 334 |
| 2018 | 338 | 345 |
| 2019 | 372 | 382 |
| 2020 | 411 | 381 |
| 2021 | 361 | 364 |
| 2022 | 291 | 335 |
| 2023 | 252 | 259 |
| 2024 | 253 | 210 |
| 2025 | 214 | 181 |
| 2026 | 94 | 146 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 2013/0092Write characterized by the shapeIndexing code871
- G11C 2013/0078Write using current through the cellIndexing code829
- G11C 2013/0073Write using bi-directional cell biasingIndexing code725
- G11C 2013/009Write using potential difference applied between cell electrodesIndexing code656
- G11C 2013/0083Write to perform initialising, forming process, electro forming or conditioningIndexing code481
- G11C 2013/0076Write operation performed depending on read resultIndexing code350
- G11C 2013/0071Write using write potential applied to access device gateIndexing code300
- G11C 2013/0088Write with the simultaneous writing of a plurality of cellsIndexing code211
Recent patents
- Semiconductor device including ferroelectric memory cell with doped ferroelectric layer6 Oct 2026US 12,755,782 B2SK Hyinx Inc.
- System and method applied with computing-in-memory6 Oct 2026US 12,755,783 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory devices for implementing read operation of bidirectional selector only memory (SOM) cells6 Oct 2026US 12,755,784 B2Samsung Electronics Co., Ltd.
- Storage device and method of controlling storage device6 Oct 2026US 12,755,785 B2Kioxia Corporation
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Random code generator, fabricating method thereof and device applying the same8 Oct 2026US 2026/0311758 A1United Microelectronics Corp.
- Memory device and operating method of the same1 Oct 2026US 2026/0301809 A1SK hynix Inc.
- Method for Resistive Random Access Memory Devices1 Oct 2026US 2026/0301810 A1Intrinsic Semiconductor Technologies Ltd.
- Digital foreground calibration system and method for successive approximation register analog-to-digital converter based on rram1 Oct 2026US 2026/0303109 A1Huazhong University of Science and Technology
- Efficient and high performance write architecture for high density resistive random access memory24 Sep 2026US 2026/0290450 A1IM2 Solutions, Inc.
Most cited
By later US patents
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Programmable metallization cell structure and method of making same441US 5,761,115 AArizona Board of Regents · 1998
- Universal memory element and method of programming same436US 5,912,839 AEnergy Conversion Devices, Inc. · 1999
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Programmable resistive device and memory using diode as selector332US 9,818,478 B2Attopsemi Technology Co., LTD · 2017