G11C 2013/0092
Write characterized by the shape
Official title: {Write characterized by the shape, e.g. form, length, amplitude of the write pulse}
G11C2013/0092 (Write characterized by the shape) appears on 871 US grants and 916 published applications in this corpus.
Search patents in G11C- Granted patents
- 871
- Published applications
- 916
- Assignees
- 167
- Inventors
- 1,156
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 1 |
| 2003 | 4 | 7 |
| 2004 | 5 | 3 |
| 2005 | 0 | 5 |
| 2006 | 7 | 14 |
| 2007 | 8 | 16 |
| 2008 | 10 | 26 |
| 2009 | 17 | 55 |
| 2010 | 33 | 49 |
| 2011 | 57 | 54 |
| 2012 | 40 | 40 |
| 2013 | 57 | 51 |
| 2014 | 55 | 43 |
| 2015 | 46 | 42 |
| 2016 | 66 | 66 |
| 2017 | 68 | 49 |
| 2018 | 44 | 39 |
| 2019 | 53 | 63 |
| 2020 | 66 | 54 |
| 2021 | 61 | 58 |
| 2022 | 44 | 64 |
| 2023 | 38 | 35 |
| 2024 | 44 | 29 |
| 2025 | 33 | 26 |
| 2026 | 10 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Multi-level bit-cell with non-linear polar material18 Aug 2026US 12,712,005 B1Kepler Computing Inc.
- Techniques for multi-level chalcogenide memory cell programming11 Aug 2026US 12,706,142 B2Micron Technology, Inc.
- Temporal kernel devices, temporal kernel computing systems, and methods of their operation16 Jun 2026US 12,660,205 B2Seoul National University R&Db Foundation
- Amplitude modulation for writing to a multi-level bit-cell26 May 2026US 12,640,199 B1Kepler Computing Inc.
- Selector only memory write operation5 May 2026US 12,620,428 B2SanDisk Technologies LLC
- Programming circuit, integrated circuit, and method27 Aug 2026US 2026/0252869 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cross-point array leakage compensation6 Aug 2026US 2026/0229265 A1SanDisk Technologies LLC
- System and method for extending lifetime of memory device23 Jul 2026US 2026/0212947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device2 Jul 2026US 2026/0188387 A1SK hynix Inc.
- Three-state programming of memory cells11 Jun 2026US 2026/0162720 A1Micron Technology, Inc.
Most cited
By later US patents
- Programming a phase-change memory with slow quench time249US 6,487,113 B1Ovonyx, Inc. · 2002
- Method for switching the properties of perovskite materials used in thin film resistors247US 6,204,139 B1University of Houston · 2001
- Resistive memory devices having a not-and (NAND) structure242US 8,107,276 B2International Business Machines Corporation · 2012
- Method and apparatus to program a phase change memory231US 6,625,054 B2Intel Corporation · 2003
- Programming a phase-change material memory225US 6,570,784 B2Ovonyx, Inc. · 2003