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US 12,660,205 B2Granted
Temporal kernel devices, temporal kernel computing systems, and methods of their operation
AssigneeSeoul National University R&Db Foundation
InventorsCheol Seong Hwang, Yoon Ho Jang
Life of this patent
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Abstract
The present disclosure relates to a temporal kernel device including at least one temporal kernel cell structure, wherein each of the temporal kernel cell structure including a nonvolatile memristor; and a resistor and a capacitor connected in parallel to each other, and the resistor and the capacitor connected in parallel are connected in series to the nonvolatile memristor.
Claims13
A temporal kernel device comprising:
- at least one temporal kernel cell structure,
- wherein each of the temporal kernel cell structure comprises:
- a first electrode;
- an intermediate electrode physically distinct from and spaced apart from the first electrode;
- and
- a second electrode physically distinct from and spaced apart from the intermediate electrode;
- a resistor and a capacitor connected in parallel to each other, the resistor and the capacitor being physically disposed between the first electrode and the intermediate electrode as distinct conductive elements formed on a same side of the intermediate electrode;
- and
- a nonvolatile memristor connected in series with the resistor and the capacitor, the nonvolatile memristor being physically disposed on an opposite side of the intermediate electrode between the intermediate electrode and the second electrode,
- wherein the resistor and the capacitor connected in parallel are connected in series to the nonvolatile memristor.
7 more elements
A method of operating a temporal kernel device including at least one temporal kernel cell structure, wherein each temporal kernel cell structure includes:
- a first electrode;
- an intermediate electrode physically distinct from and spaced apart from the first electrode;
- and
- a second electrode physically distinct from and spaced apart from the intermediate electrode;
- a resistor and a capacitor connected in parallel to each other, the resistor and the capacitor being physically disposed between the first electrode and the intermediate electrode as distinct conductive elements formed on a same side of the intermediate electrode;
- and
- a nonvolatile memristor connected in series with the resistor and the capacitor, the nonvolatile memristor being physically disposed on an opposite side of the intermediate electrode between the intermediate electrode and the second electrode, the intermediate electrode physically separating the resistor and the capacitor from the nonvolatile memristor in a stacked structure,
- the method comprising:
- applying a time-series input signal between the first electrode and the second electrode such that the time-series input signal propagates through the resistor and the capacitor disposed between the first electrode and the intermediate electrode and then through the nonvolatile memristor disposed between the intermediate electrode and the second electrode;
- storing information in the nonvolatile memristor based on the time-series input signal;
- and
- reading the information stored in the nonvolatile memristor.
9 more elements
Dependencies are inferred from the claim text.