Method for switching the properties of perovskite materials used in thin film resistors

Abstract

A method for switching properties of perovskite thin film materials, including the colossal magnetoresitive (CMR) and high temperature superconducting (HTSC) materials, is provided. Short electrical pulses are applied to the materials in thin films to change both reversibly and non-reversibly the electrical, thermal, mechanical and magnetic properties of the material. Reversible resistance changes of over a factor of 10 are induced in CMR materials at room temperature and in zero external magnetic field by electrical pulsing. Applications of the method and materials to form memory devices, resistors in electronic circuits which can be varied in resistance and other applications are disclosed.

Dependencies are inferred from the claim text.