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US 6,625,054 B2Granted
Method and apparatus to program a phase change memory
AssigneeIntel Corporation
InventorsTyler Lowrey, Manzur Gill
Life of this patent
Estimating the term…
Abstract
Briefly, in accordance with an embodiment of the invention, a method and an apparatus to program a multi level cell (MLC) phase change material is provided.
Claims37
A method, comprising:
- applying a signal to a memory material having more than two states;
- and
- setting a fall time of the signal to place the memory material in one of the more than two states.
An apparatus, comprising:
- a memory material having at least three states;
- and
- a device to provide a signal to the memory material, wherein the device is adapted to set a fall time of the signal to program the memory material to one of the at least three states.
A system, comprising:
- a controller;
- a transceiver coupled to the controller;
- a memory element having at least three states and coupled to the controller;
- and
- a device adapted to provide a signal to the memory element, wherein the device sets a decay rate of the signal to program the memory element to one of the at least three states.
2 more elements
Dependencies are inferred from the claim text.