G11C 2013/0071
Write using write potential applied to access device gate
Official title: {Write using write potential applied to access device gate}
G11C2013/0071 (Write using write potential applied to access device gate) appears on 300 US grants and 299 published applications in this corpus.
Search patents in G11C- Granted patents
- 300
- Published applications
- 299
- Assignees
- 95
- Inventors
- 505
- Latest grant
- 19 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 4 |
| 2005 | 2 | 5 |
| 2006 | 7 | 4 |
| 2007 | 3 | 7 |
| 2008 | 4 | 11 |
| 2009 | 6 | 11 |
| 2010 | 5 | 19 |
| 2011 | 26 | 23 |
| 2012 | 22 | 16 |
| 2013 | 23 | 19 |
| 2014 | 17 | 15 |
| 2015 | 20 | 28 |
| 2016 | 34 | 29 |
| 2017 | 29 | 13 |
| 2018 | 16 | 11 |
| 2019 | 18 | 19 |
| 2020 | 16 | 11 |
| 2021 | 15 | 12 |
| 2022 | 10 | 10 |
| 2023 | 7 | 8 |
| 2024 | 10 | 8 |
| 2025 | 6 | 4 |
| 2026 | 2 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- In-memory computation device having an improved current reading circuit and control method19 May 2026US 12,633,343 B2STMicroelectronics S,r.l.
- Crossbar circuits utilizing current-mode digital-to-analog converters14 Apr 2026US 12,603,117 B2TetraMem Inc.
- RRAM cell structure and fabrication method therefor16 Dec 2025US 12,501,627 B2Shanghai Ic R&D Center Co., Ltd
- Resistive random access memory based one-time-programmable memory devices9 Dec 2025US 12,494,250 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device9 Sep 2025US 12,412,610 B2Renesas Electronics Corporation
- In-memory acceleration using 6t-rrams with signed weight values13 Aug 2026US 2026/0237431 A1Government of the United States as Represented by the Secretary of the Air Force
- External pad isolation power switch for rram security2 Jul 2026US 2026/0188384 A1GLOBALFOUNDRIES U. S. Inc.
- Memory apparatus and operation method of memory apparatus4 Jun 2026US 2026/0155160 A1SK hynix Inc.
- Word line driver system for non-volatile memory structure4 Jun 2026US 2026/0155164 A1GLOBALFOUNDRIES U. S. Inc.
- Resistive random-access memory structure and method21 May 2026US 2026/0141950 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Universal memory element with systems employing same and apparatus and method for reading, writing and programming same321US 6,141,241 AEnergy Conversion Devices, Inc. · 2000
- Current driven memory cells having enhanced current and enhanced current symmetry137US 7,515,457 B2Grandis, Inc. · 2009
- Detecting switching of access elements of phase change memory cells122US 7,154,774 B2Ovonyx, Inc. · 2006
- Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell111US 8,179,711 B2Samsung Electronics Co., Ltd. · 2012
- Nonvolatile semiconductor memory device107US 7,057,922 B2Sharp Kabushiki Kaisha · 2006