Word line driver system for non-volatile memory structure

A structure comprising:

• a first word line voltage (VWL) control node connected to receive a write mode voltage signal;
• a second VWL control node connected to receive a read mode voltage signal;
• an output node;
• a first transistor and a second transistor connected in series between the first VWL control node and the output node;
• a third transistor and a fourth transistor connected in parallel between the second VWL control node and the output node;
• a fifth transistor and a sixth transistor connected in series between the output node and ground;
• a seventh transistor connected in parallel with the sixth transistor between the fifth transistor and ground;
• and
• an eighth transistor connected between a gate of the second transistor and a junction between the first transistor and the second transistor, wherein gates of the first transistor and the eighth transistor are connected,
• wherein the first transistor, the second transistor, and the third transistor are P-type field effect transistors, and
• wherein the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor are N-type field effect transistors.

A structure comprising:

• an array of bit cells in columns and rows;
• word lines for the rows, respectively;
• and
• a word line driver system including:
• word line drivers connected to the word lines,
• wherein each word line driver includes:
• a first word line voltage (VWL) control node;
• a second VWL control node;
• an output node connected to an end of a word line;
• a first transistor and a second transistor connected in series between the first VWL control node and the output node;
• and
• a third transistor and a fourth transistor connected in parallel between the second VWL control node and the output node, and
• wherein the first transistor, the second transistor and the third transistor have a first type conductivity and the fourth transistor has a second type conductivity different from the first type conductivity.