G11C 2013/0083
Write to perform initialising, forming process, electro forming or conditioning
Official title: {Write to perform initialising, forming process, electro forming or conditioning}
G11C2013/0083 (Write to perform initialising, forming process, electro forming or conditioning) appears on 481 US grants and 519 published applications in this corpus.
Search patents in G11C- Granted patents
- 481
- Published applications
- 519
- Assignees
- 136
- Inventors
- 864
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 2 |
| 2005 | 0 | 1 |
| 2006 | 1 | 5 |
| 2007 | 2 | 8 |
| 2008 | 7 | 16 |
| 2009 | 9 | 18 |
| 2010 | 17 | 22 |
| 2011 | 15 | 35 |
| 2012 | 23 | 26 |
| 2013 | 37 | 38 |
| 2014 | 37 | 39 |
| 2015 | 49 | 37 |
| 2016 | 40 | 40 |
| 2017 | 35 | 23 |
| 2018 | 23 | 21 |
| 2019 | 38 | 40 |
| 2020 | 30 | 26 |
| 2021 | 23 | 32 |
| 2022 | 29 | 24 |
| 2023 | 20 | 27 |
| 2024 | 21 | 13 |
| 2025 | 20 | 16 |
| 2026 | 4 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Management of unmapped allocation units of a memory sub-system3 Feb 2026US 12,541,398 B2Micron Technology, Inc.
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- RRAM Memory Cell Structure13 Aug 2026US 2026/0239894 A1Silicon Storage Technology, Inc.
- Sequence for first fire and forming in cross-point arrays6 Aug 2026US 2026/0229285 A1SanDisk Technologies LLC
- Resistive random-access memory (reram) configured for overcoming the affects of read disturb30 Jul 2026US 2026/0221185 A1Weebit Nano Ltd.
- Memory device and method for manufacturing a memory cell arrangement using a preconditioning operation25 Jun 2026US 2026/0181909 A1Ferroelectric Memory GmbH
Most cited
By later US patents
- Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device106US 8,054,674 B2National Institute of Advanced Industrial Science and Technology · 2011
- Semiconductor device and manufacturing method of the same104US 7,924,138 B2Fujitsu Limited · 2011
- Polymer memory cell operation88US 7,221,599 B1Spansion LLC · 2007
- Variable resistance nonvolatile memory element writing method and variable resistance nonvolatile memory device78US 9,378,817 B2Panasonic Intellectual Property Management Co., Ltd. · 2016
- Process of making a filament-type memory semiconductor device55US 3,980,505 A1976