Control device, storage device, semiconductor device, and control method

A storage device comprising:

• a plurality of resistance change storage elements, including a first storage element and a second storage element, each of which stores information by using a difference of a resistance state;
• and
• a writing circuit that, before an information write request is accepted by a control device, receives a first write instruction including an entire surface of a cell array to write information to all elements of the cell array to bring the first storage element and the second storage element into a first resistance state and brings the first storage element and the second storage element into a first resistance state, and when a second write instruction is inputted from the control device that has accepted the information write request, brings the first storage element and the second storage element into the first resistance state or a second resistance state, respectively, according to the write request, wherein
• the first storage element enters the first resistance state in response to the second write instruction being to bring a first object into the first resistance state;
• and
• the second storage element enters the second resistance state in response to the second write instruction being to bring a second object into the first resistance state.

A semiconductor device comprising:

• a storage device including a plurality of resistance change storage elements, including a first storage element and a second storage element, each of which stores information by using a difference of a resistance state;
• and
• a control device including
• an initial write instruction unit that, before accepting an information write request to the storage device, outputs to the storage device a first write instruction including an entire surface of a cell array to write information to all elements of the cell array to bring the first storage element and the second storage element into a first resistance state, and
• a data write instruction unit that, upon accepting the write request, outputs to the storage device a second write instruction to bring the first storage element and the second storage element into the first resistance state or a second resistance state, respectively, according to the write request, wherein
• the first storage element enters the first resistance state in response to the second write instruction corresponding to bringing a first object into the first resistance state, and
• the second storage element enters the second resistance state in response to the second write instruction corresponding to bringing a second object into the first resistance state.

A control method, by a control device, comprising:

• before accepting an information write request to a storage device including a plurality of resistance change storage elements, including a first storage element and a second storage element, each of which stores information by using a difference of a resistance state, outputting to the storage device a first write instruction including an entire surface of a cell array to write information to all elements of the cell array to bring the storage element into a first resistance state;
• upon accepting the write request, outputting to the storage device a second write instruction to bring the first storage element and the second storage element into the first resistance state or a second resistance state, respectively, according to the write request;
• in response to the second write instruction corresponding to bringing a first object into the first resistance state, the first storage element enters the first resistance state;
• and
• in response to the second write instruction corresponding to bringing a second object into the first resistance state, the second storage element enters the second resistance state.