Method for Resistive Random Access Memory Devices

A memory comprising a plurality of resistive random access memory devices, each resistive random access memory device electroformed by:

• application of preconditioning step in which a first voltage exceeding a first threshold voltage is applied across the resistive random access memory device whilst limiting a current through the resistive random access memory device to a first current value, wherein the preconditioning step increases the conductance of the resistive random access memory device without forming a filament;
• application of a filament forming step after the preconditioning step, in which the filament is formed by passing a current which exceeds the first current value through the resistive random access memory device.

A memory comprising a plurality of resistive random access memory devices, each resistive random access memory device comprising a resistance switching layer formed from a material which exhibits resistance switching;

• wherein a mean of a distribution of maximum reset currents from switching the plurality of resistive random access memory devices is less than or equal to 150 μA.

A memory comprising a plurality of resistive random access memory devices, wherein a first mean of a first distribution of maximum reset currents from switching the plurality of resistive random access memory devices is less than a second mean of a second distribution of maximum reset currents from switching a second plurality of resistive random access memory devices comprised by a comparative memory;

• wherein the comparative memory has an identical pristine structure to the memory, and the second plurality of resistive random access memory devices of the comparative memory are each electroformed using a single current compliance step such that a yield of electroformed resistive random access memory devices is 95% or more.