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US 7,924,138 B2Granted
Semiconductor device and manufacturing method of the same
AssigneeFujitsu Limited
InventorsKentaro Kinoshita, Chikako Yoshida
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Abstract
A titanium oxide film, a nickel oxide film and a top electrode are formed on a bottom electrode, and a resistance element is constituted by the bottom electrode, the titanium oxide film, the nickel oxide film and the top electrode. A thickness of the titanium oxide film is 5 nm, and a thickness of the nickel oxide film is 60 nm. A rate of oxygen in nickel oxide composing the nickel oxide film is lower than a rate of oxygen in a stoichiometric composition.
Claims17
A semiconductor device, comprising:
- a first electrode;
- a metal-containing film formed on the first electrode and containing metallic atoms;
- a resistance change film formed on the metal-containing film and containing metal oxide;
- and
- a second electrode formed on the resistance change film, wherein
- the metal-containing film is composed of a substance which is easier to bond with oxygen than a substance composing the resistance change film,
- a resistance of the resistance change film changes in accordance with a voltage applied between the first electrode and the second electrode, and
- the resistance change film is composed of at least one kind of substance selected from a group consisting of titanium oxide, nickel oxide, yttrium oxide, cerium oxide, magnesium oxide, zinc oxide, zirconium oxide, tungsten oxide, niobium oxide, tantalum oxide, chromium oxide, manganese oxide, aluminum oxide, vanadium oxide and silicon oxide.
5 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a metal-containing film containing metallic atoms on a first electrode;
- forming a resistance change film containing metal oxide on the metal-containing film;
- and
- forming a second electrode on the resistance change film, wherein
- a film composed of a substance easier to bond with oxygen than a substance composing the resistance change film is formed as the metal-containing film,
- a film of which resistance changes in accordance with a voltage applied between the first electrode and the second electrode is formed as the resistance change film, and
- a film composed of at least one kind of substance selected from a group consisting of titanium oxide, nickel oxide, yttrium oxide, cerium oxide, magnesium oxide, zinc oxide, zirconium oxide, tungsten oxide, niobium oxide, tantalum oxide, chromium oxide, manganese oxide, aluminum oxide, vanadium oxide and silicon oxide is formed as the resistance change film.
4 more elements
Dependencies are inferred from the claim text.