G11C 2013/0085
Write a page or sector of information simultaneously
Official title: {Write a page or sector of information simultaneously, e.g. a complete row or word line}
G11C2013/0085 (Write a page or sector of information simultaneously) appears on 54 US grants and 55 published applications in this corpus.
Search patents in G11C- Granted patents
- 54
- Published applications
- 55
- Assignees
- 27
- Inventors
- 97
- Latest grant
- 28 Feb 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 1 |
| 2006 | 1 | 1 |
| 2007 | 1 | 1 |
| 2008 | 1 | 2 |
| 2009 | 1 | 1 |
| 2010 | 1 | 4 |
| 2011 | 5 | 6 |
| 2012 | 3 | 3 |
| 2013 | 5 | 1 |
| 2014 | 0 | 6 |
| 2015 | 4 | 3 |
| 2016 | 6 | 8 |
| 2017 | 8 | 4 |
| 2018 | 7 | 3 |
| 2019 | 1 | 3 |
| 2020 | 5 | 4 |
| 2021 | 2 | 2 |
| 2022 | 2 | 1 |
| 2023 | 1 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 1 |
By publication year.
Recent patents
- Array device and writing method thereof28 Feb 2023US 11,594,279 B2Winbond Electronics Corp.
- Method for programming a phase-change memory device of differential type, phase-change memory device, and electronic system7 Jun 2022US 11,355,191 B2STMicroelectronics S,r.l.
- Memory devices and memory operational methods5 Apr 2022US 11,295,812 B2Micron Technology, Inc.
- Non-volatile memory with fast partial page operation8 Jun 2021US 11,031,085 B2SanDisk Technologies LLC
- Method of writing data in nonvolatile memory device, with divided subpages or subblocks, and method of erasing data in nonvolatile memory device with divided subpages or subblocks19 Jan 2021US 10,896,728 B2Samsung Electronics Co., Ltd.
- Method for writing in a phase change memory6 Mar 2025US 2025/0078925 A1STMicroelectronics International N. V.
- Array device and writing method thereof3 Feb 2022US 2022/0036947 A1Winbond Electronics Corp.
- Method for programming a phase-change memory device of differential type, phase-change memory device, and electronic system29 Apr 2021US 2021/0125668 A1STMicroelectronics S,r.l.
- Memory apparatus and data access method for memory4 Feb 2021US 2021/0035644 A1Macronix International Co., Ltd.
- Non-volatile memory with fast partial page operation24 Sep 2020US 2020/0303010 A1SanDisk Technologies LLC
Most cited
By later US patents
- Circuit and system for concurrently programming multiple bits of OTP memory devices26US 9,324,447 B22016
- Page mode access for non-volatile memory arrays23US 7,391,664 B2Ovonyx, Inc. · 2008
- Synchronous page-mode phase-change memory with ECC and RAM cache22US 7,606,111 B2Super Talent Electronics, Inc. · 2009
- Conductive memory array having page mode and burst mode write capability13US 7,099,179 B2Unity Semiconductor Corporation · 2006
- Buffering systems methods for accessing multiple layers of memory in integrated circuits11US 7,889,571 B2Unity Semiconductor Corporation · 2011