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US 2025/0078925 A1Published application
Method for writing in a phase change memory
AssigneeSTMicroelectronics International N.V.
InventorsGuillaume Docquier, Michael Nicolaes
Life of this patent
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Abstract
The present description relates to a method of writing a first group of N data elements, N being an integer, into a second group of N memory cells of a phase-change memory, each data element of the first group comprising a metadata element, and at each writing of a data element of the first group into a memory cell of the second group, the value of the metadata element of the data element is modified.
Claims20
A method of operating a phase-change memory, the method comprising:
- writing a first group of N data elements, N being an integer, into a second group of N memory cells of the phase-change memory, each data element of the first group comprising a metadata element;
- and
- at each writing of a respective data element of the first group into a respective memory cell of the second group, modifying a value of the metadata element of the respective data element stored in the respective memory cell.
An electronic device comprising:
- a data bus;
- a phase-change memory coupled to the data bus, wherein the phase-change memory comprises a second group of N memory cells, wherein N is an integer, and wherein each memory cell of the second group comprises a metadata element;
- and
- a processor operatively coupled to the phase-change memory via the data bus, wherein the processor is configured to:
- write a first group of N data words into the second group of N memory cells of the phase-change memory;
- and
- at each writing of a respective data word of the first group into a respective memory cell of the second group, modify a value of the metadata element of the respective memory cell.
4 more elements
A method of operating a phase-change memory, the method comprising:
- writing a first group of N data words, N being an integer, into a second group of N memory cells of the phase-change memory, each memory cell of the second group comprising a metadata element;
- and
- at each writing of a respective data word of the first group into a respective memory cell of the second group, modifying a value of the metadata element of the respective memory cell.
Dependencies are inferred from the claim text.