Unity Semiconductor Corporation
Unity Semiconductor Corporation is named on 139 US grants and 37 published applications in this corpus. Its most frequent classification is G11C (Static stores).
- Granted patents
- 139
- Published applications
- 37
- Inventors
- 30
- Granted in 2026 so far
- 0
- Most recent grant
- 26 Jun 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 1 | 15 |
| 2005 | 10 | 6 |
| 2006 | 20 | 7 |
| 2007 | 5 | 2 |
| 2008 | 13 | 7 |
| 2009 | 8 | 0 |
| 2010 | 22 | 0 |
| 2011 | 43 | 0 |
| 2012 | 17 | 0 |
By publication year.
Technology areas
Share of 176 documents
- G11CStatic stores156
- H10NElectric solid-state devices not otherwise provided for46
- H10BElectronic memory devices45
- G06FComputing and data processing29
- Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information17
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered7
- H10DInorganic electric semiconductor devices4
- H03KPulse technique3
- B82YSpecific uses or applications of nanostructures2
- C23CCoating metallic material2
Recent patents
- Data retention structure for non-volatile memory26 Jun 2012US 8,208,284 B2
- Contemporaneous margin verification and memory access for memory cells in cross-point memory arrays26 Jun 2012US 8,208,287 B2
- Integrated circuits to control access to multiple layers of memory in a solid state drive26 Jun 2012US 8,208,297 B2
- Method for indicating a non-flash nonvolatile multiple-type three-dimensional memory26 Jun 2012US 8,208,319 B2
- Memory emulation in an image capture device24 Apr 2012US 8,164,656 B2
- Fast data access through page manipulation24 Jul 2008US 2008/0175072 A1
- Sensing a signal in a two-terminal memory array having leakage current24 Apr 2008US 2008/0094876 A1
- Two-cycle sensing in a two-terminal memory array having leakage current24 Apr 2008US 2008/0094929 A1
- Scaleable memory systems using third dimension memory10 Apr 2008US 2008/0084727 A1
- Two terminal memory array having reference cells3 Jan 2008US 2008/0002473 A1
Most cited
By later US patents
- Preservation circuit and methods to maintain values representing data in one or more layers of memory234US 7,719,876 B22010
- Discharge of conductive array lines in fast memory161US 7,020,006 B22006
- Non-volatile memory device ion barrier113US 8,045,364 B22011
- Memory using variable tunnel barrier widths112US 7,538,338 B22009
- Conductive memory device with conductive oxide electrodes107US 7,067,862 B22006