Integrated circuits to control access to multiple layers of memory in a solid state drive
AssigneeUnity Semiconductor Corporation
InventorRobert Norman
Life of this patent
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AssigneeUnity Semiconductor Corporation
InventorRobert Norman
Estimating the term…
Circuits to control access to memory; for example, third dimension memory are disclosed. An integrated circuit (IC) may be configured to control access to memory cells. For example, the IC may include a memory having memory cells that are vertically disposed in multiple layers of memory. The IC may include a memory access circuit configured to control access to a first subset of the memory cells in response to access control data in a second subset of the memory cells. Each memory cell may include a non-volatile two-terminal memory element that stores data as a plurality of conductivity profiles that can be non-destructively sensed by applying a read voltage across the two terminals of the memory element. New data can be written by applying a write voltage across the two terminals of the memory element. The two-terminal memory elements can be arranged in a two-terminal cross-point array configuration.
A data storage system including non-Flash re-writeable non-volatile memory, comprising:
Dependencies are inferred from the claim text.