Sensing a signal in a two-terminal memory array having leakage current
AssigneeUnity Semiconductor Corporation
InventorsChang Hua Siau, Christophe Chevallier, Darrell Rinerson
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AssigneeUnity Semiconductor Corporation
InventorsChang Hua Siau, Christophe Chevallier, Darrell Rinerson
Estimating the term…
A two-terminal memory array includes a plurality of first and second conductive traces. An address unit operatively applies a select voltage across a selected pair of the first and second conductive traces and applies a non-select voltage potential to unselected traces. A total current flowing in the selected first conductive trace and a leakage current flowing through unselected second conductive traces are sensed by a sense unit in a one cycle or a two cycle pre-read operation. The total and leakage currents can be combined with a reference signal to derive a data signal indicative of one of a plurality of conductivity profiles that represent stored data. The conductivity profiles can be stored in a resistive state memory element that is electrically in series with the selected first and second conductive traces.
An apparatus for sensing current in a two-terminal memory array, comprising:
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The apparatus as set forth in claim 28, wherein the value of the reference resistance is programmed to be approximately half-way between a resistance for a first resistive state and a resistance for a second resistive state.
An apparatus for sensing current in a two-terminal memory array, comprising:
A method of sensing current in a two-terminal memory, comprising:
A method of sensing current in a two-terminal memory, comprising;
Dependencies are inferred from the claim text.