Non-volatile memory device ion barrier

A memory device storing non-volatile data as a programmed conductivity profile, comprising:

• a re-writeable non-volatile two-terminal memory cell configured to retain stored data in the absence of electrical power and including electrically in series with one another
• a first electrically conductive material,
• a conductive oxide layer including mobile ions and in contact with the first electrically conductive material,
• an electronically insulating layer in contact with the conductive oxide layer at a first interface and having a first thickness and a first dielectric constant, the electronically insulating layer is permeable to the mobile ions and a portion of the mobile ions are positioned in the electronically insulating layer,
• an ion barrier layer in contact with the electronically insulating layer at a second interface and having a second thickness and a second dielectric constant, a combined thickness of the ion barrier layer and the electronically insulating layer is approximately 50 Å or less, the ion barrier layer is not permeable to the mobile ions and is operative to prevent transport of the mobile ions through the second interface, and
• a second electrically conductive material in contact with the ion barrier layer at a third interface, and
• wherein a majority of the portion of the mobile ions in the electronically insulating layer are approximately positioned in a region in the electronically insulating layer that is above the first interface by a first distance.

A memory device storing non-volatile data as an erased conductivity profile, comprising:

• a re-writeable non-volatile two-terminal memory cell configured to retain stored data in the absence of electrical power and including electrically in series with one another
• a first electrically conductive material,
• a conductive oxide layer including mobile ions and in contact with the first electrically conductive material,
• an electronically insulating layer in contact with the conductive oxide layer at a first interface and having a first thickness and a first dielectric constant, the electronically insulating layer is permeable to the mobile ions,
• an ion barrier layer in contact with the electronically insulating layer at a second interface and having a second thickness and a second dielectric constant, a combined thickness of the ion barrier layer and the electronically insulating layer is approximately 50 Å or less, the ion barrier layer is not permeable to the mobile ions and is operative to prevent transport of the mobile ions through the second interface, and
• a second electrically conductive material in contact with the ion barrier layer at a third interface, and
• wherein a majority of the mobile ions are positioned below the first interface in the conductive oxide layer.