Array device and writing method thereof

An array device, comprising:

• a crossbar array, in which a variable resistive memory element is connected to each intersection of a plurality of row lines and a plurality of column lines;
• a row select part selecting a row line of the crossbar array;
• a column select part selecting a column line of the crossbar array;
• and
• a writing part writing a variable resistive memory element connected to a row line selected by the row select part and a column line selected by the column select part,
• the writing part applies a first write voltage with a controlled pulse width to the row line and applies a second write voltage with a controlled pulse width to the column line to write to a selected variable resistive memory element,
• wherein the writing part aligns a falling edge of a pulse of the first write voltage with a rising edge of a pulse of the second write voltage.

An array device, comprising:

• a crossbar array, in which a variable resistive memory element is connected to each intersection of a plurality of row lines and a plurality of column lines;
• a row select part selecting a row line of the crossbar array;
• a column select part selecting a column line of the crossbar array;
• and
• a writing part writing a variable resistive memory element connected to a row line selected by the row select part and a column line selected by the column select part,
• the writing part applies a first write voltage with a controlled pulse width to the row line and applies a second write voltage with a controlled pulse width to the column line to write to a selected variable resistive memory element,
• wherein the writing part applies a write-inhibit voltage to a non-selected row line and a non-selected column line.