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US 11,031,085 B2Granted
Non-volatile memory with fast partial page operation
AssigneeSanDisk Technologies LLC
InventorsMohan V Dunga, Pitamber Shukla
Life of this patent
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Abstract
A non-volatile memory system comprises a memory structure and a control circuit connected to the memory structure. The memory structure includes one or more planes of non-volatile memory cells. Each plane is divided into a plurality of partial planes. The control circuit is configured to write to and read from the memory cells by writing a partial page into a particular partial plane and reading the partial page from the particular partial plane using a set of parameters optimized for the particular partial plane.
Claims20
An apparatus, comprising:
- a plurality of non-volatile memory cells including a plurality of partial planes, each of the partial planes corresponding to a non-overlapping subset of the memory cells connected along a word line;
- and
- one or more control circuits connected to the non-volatile memory cells, the one or more control circuits are configured to read data from and write data to a selected one of the partial planes by applying to the word line one or more voltages that are dependent on a resistive/capacitive behavior of the word line in the partial plane.
A method, comprising:
- receiving a command to access a partial page of data in a contiguous subset of memory cells connected to a word line;
- determining a voltage to apply to the word line based on a location of the contiguous subset of memory cells along the word line relative to a word line driver;
- and
- accessing the partial page of data, the accessing including applying the determined voltage to the word line.
1 more element
A system, comprising:
- a non-volatile memory controller;
- and
- a memory die, comprising:
- an array of non-volatile memory cells;
- and
- an on-die control circuit connected to the array of non-volatile memory cells, the control circuit is configured to read and write data as a full page, a full page corresponding to a plurality of memory cells connected along a word line, the control circuit is further configured to read and write data as one of a plurality of partial pages, each of the partial pages corresponding to a contiguous subset of the plurality of memory cells connected to the word line, wherein one or more voltages applied to the word line in a read or write operation of a selected partial page are based on a capacitive behavior of a portion of word line along which the memory cells of the selected partial page are connected.
3 more elements
Dependencies are inferred from the claim text.