Programmable resistive device and memory using diode as selector

An electronic system, comprising:

• a processor;
• and
• a programmable resistive memory operatively connected to the processor, the programmable resistive memory including a plurality of programmable resistive devices, at least one of the devices comprising:
• a diode and/or a programmable resistive element being fabricated in a contact hole at the crossovers of a plurality of the first and a plurality of second conductor lines located in more than two vertical layers;
• the programmable resistive element coupled to a first conductor line;
• and
• the diode including at least a first active region and a second active region isolated from the first active region, where the first active region having a first type of dopant and the second region having a second type of dopant, the first active region providing a first terminal of the diode, the second active region providing a second terminal of the diode, the first active region coupled to the programmable resistive element, and the second active region coupled to a second conductor line,
• wherein at least one of the programmable resistive element coupled to another programmable resistive device or shared between two programmable resistive devices whose diode being coupled to the second or a third conductor line, such coupling is facilitated by an extension that extends vertically through the second conductor line penetrating into the second conductor to couple to the PRE or the diode of the another PRD, and
• wherein the programmable resistive element is configured to be programmable by applying voltages to at least one of the first, the second and/or the third conductor lines to thereby change the resistance for a different logic state.

A method for operating a programmable resistive memory comprises:

• providing a plurality of programmable resistive memory devices, at least one of the programmable resistive devices includes at least (i) a diode and/or a programmable resistive element fabricated in a contact hole at the cross-over of a plurality of the first and a plurality of second conductor lines in more than two different vertical planes;
• (ii) the programmable resistive element coupled to a first conductor line;
• (iii) the diode including at least a first active region and a second active region isolated from the first active region, where the first active region having a first type of dopant and the second region having a second type of dopant, the first active region providing a first terminal of the diode, the second active region providing a second terminal of the diode, the first active region coupled to the programmable resistive element, and the second active region coupled to a second conductor line;
• and (iv) at least one programmable resistive element being coupled to another programmable resistive devices or shared between two programmable resistive devices whose diode being coupled to the second or a third conductor line, such coupling is facilitated by an extension that extends vertically through the second conductor line penetrating into the second conductor to couple to the PRE or the diode of the another PRD, and
• programming a logic state into at least one of the programmable resistive devices by applying voltages to at least one of the first, the second, and/or the third conductor lines.

An electronic system, comprising:

• a processor;
• and
• a programmable resistive memory operatively connected to the processor, the programmable resistive memory including a plurality of programmable resistive devices, at least one of the devices comprising:
• a diode and a programmable resistive element being fabricated in a contact hole at the crossovers of at least one first conductor line and at least one second conductor line, which are located in different vertical layers;
• the programmable resistive element coupled to the first conductor line;
• and
• the diode including at least a first active region and a second active region isolated from the first active region, where the first active region having a first type of dopant and the second region having a second type of dopant, the first active region providing a first terminal of the diode, the second active region providing a second terminal of the diode, the first active region coupled to the programmable resistive element, and the second active region coupled to the second conductor line,
• wherein at least one of the programmable resistive elements is coupled to another programmable resistive device via the second conductor line,
• wherein the coupling of the at least one of the programmable resistive elements to another programmable resistive device is facilitated by an extension that extends vertically through the second conductor line penetrating into the second conductor to couple to the another programmable resistive device, and
• wherein the programmable resistive element is configured to be programmable by applying voltages to at least one of the first conductor line and/or the second conductor line to thereby change the resistance for a different logic state.