G11C 2013/009
Write using potential difference applied between cell electrodes
Official title: {Write using potential difference applied between cell electrodes}
G11C2013/009 (Write using potential difference applied between cell electrodes) appears on 656 US grants and 699 published applications in this corpus.
Search patents in G11C- Granted patents
- 656
- Published applications
- 699
- Assignees
- 160
- Inventors
- 932
- Latest grant
- 14 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 2 |
| 2003 | 2 | 11 |
| 2004 | 10 | 17 |
| 2005 | 11 | 22 |
| 2006 | 27 | 41 |
| 2007 | 23 | 40 |
| 2008 | 22 | 58 |
| 2009 | 29 | 64 |
| 2010 | 57 | 72 |
| 2011 | 74 | 46 |
| 2012 | 64 | 27 |
| 2013 | 37 | 17 |
| 2014 | 23 | 10 |
| 2015 | 17 | 26 |
| 2016 | 26 | 29 |
| 2017 | 35 | 21 |
| 2018 | 22 | 29 |
| 2019 | 37 | 50 |
| 2020 | 46 | 29 |
| 2021 | 31 | 36 |
| 2022 | 21 | 19 |
| 2023 | 14 | 10 |
| 2024 | 10 | 6 |
| 2025 | 10 | 6 |
| 2026 | 2 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- System and method for extending lifetime of memory device14 Apr 2026US 12,603,145 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Self-healing memory device and method of manufacturing the same10 Feb 2026US 12,550,634 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Spike based programming of a memory cell to reset state18 Nov 2025US 12,475,945 B2Intel Corporation
- Reducing disturbance in crossbar array circuits18 Nov 2025US 12,475,947 B2TetraMem Inc.
- Multiply-accumulate unit23 Sep 2025US 12,423,056 B2Anaflash Inc.
- Memory including variable resistor24 Sep 2026US 2026/0290451 A1SK hynix Inc.
- System and method for extending lifetime of memory device23 Jul 2026US 2026/0212947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory performing computing operation and operation method of memory system16 Jul 2026US 2026/0204315 A1SK hynix Inc.
- Memory device2 Jul 2026US 2026/0188387 A1SK hynix Inc.
- 3d memory device and method of implementing multi-level memory using the same11 Jun 2026US 2026/0164678 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Programmable metallization cell structure and method of making same441US 5,761,115 AArizona Board of Regents · 1998
- Programmable microelectronic devices and method of forming and programming same396US 6,487,106 B1Arizona Board of Regents · 2002
- Programmable metallization cell structure and method of making same327US 6,084,796 AArizona Board of Regents · 2000
- Programmable sub-surface aggregating metallization structure and method of making same313US 6,418,049 B1Arizona Board of Regents · 2002
- Programmable metallization cell structure and method of making same305US 5,914,893 AArizona Board of Regents · 1999