System and method for extending lifetime of memory device

A memory system comprising:

• a memory controller coupled to a memory cell and configured to:
• apply a first voltage to the memory cell to write input data thereto, and
• apply a second voltage larger than the first voltage to the memory cell to extend a lifetime thereof,
• wherein the memory controller includes:
• an amplitude controller configured to:
• select the first voltage to write the input data to the memory cell, in response to a first detecting that the memory cell has not failed,
• select the second voltage to repair the memory cell, in response to a second detecting that the memory cell has failed,
• select a third voltage less than the second voltage to write additional input data to the memory cell after repairing the memory cell.

A memory controller comprising:

• an amplitude controller configured to:
• select a first amplitude to write input data at a memory cell,
• select a second amplitude to extend a lifetime of the memory cell, wherein a pulse having one of the first amplitude or the second amplitude selected by the amplitude controller is applied by a pulse generator to the memory cell, and wherein the pulse generator is coupled to the amplitude controller,
• select the first amplitude to write the input data at the memory cell, in response to a first determining that the memory cell has not failed,
• select the second amplitude to repair the memory cell, in response to a second determining that the memory cell has failed, and
• select a third amplitude less than the second amplitude to write additional input data to the memory cell after repairing the memory cell.