Back to results
US 2026/0290451 A1Published application
Memory including variable resistor
AssigneeSK hynix Inc.
InventorsJae Hyuk PARK, Myoungsub KIM, Ung Hee PARK, Sang Min LEE
Life of this patent
Estimating the term…
Abstract
A memory includes a first word line electrode; a second word line electrode; a first write line electrode disposed between the first word line electrode and the second word line electrode; a variable resistance layer extending to be coupled to the first word line electrode, the second word line electrode, and the first write line electrode; and a bit line electrode disposed on the variable resistance layer and extending along the variable resistance layer.
Claims20
A memory comprising:
- a first word line electrode;
- a second word line electrode;
- a first write line electrode disposed between the first word line electrode and the second word line electrode;
- a variable resistance layer extending to be coupled to the first word line electrode, the second word line electrode, and the first write line electrode;
- and
- a bit line electrode disposed on the variable resistance layer and extending along the variable resistance layer.
3 more elements
A memory comprising:
- a stack including a first word line electrode, a first write line electrode, and a second word line electrode, which are sequentially stacked;
- a variable resistance layer extending in a specific direction along which the first word line electrode, the first write line electrode, and the second word line electrode are stacked;
- and
- a bit line electrode extending along the variable resistance layer.
1 more element
A memory comprising:
- a first word line electrode extending in a first direction;
- a second word line electrode extending in the first direction;
- a first write line electrode extending in the first direction between the first word line electrode and the second word line electrode;
- a variable resistance layer disposed on the first word line electrode, the second word line electrode, and the first write line electrode;
- and
- a bit line electrode disposed on the variable resistance layer and extending in a second direction that crosses the first direction.
3 more elements
A memory comprising:
- a first memory cell including a first electrode, a common electrode, and a first portion of a variable resistance layer, the first electrode extending in a first direction, the common electrode extending in a second direction that crosses the first direction, the variable resistance layer being disposed between the first electrode and the common electrode;
- a second memory cell including a second electrode, the common electrode, and a second portion of the variable resistance layer, the second electrode extending in the first direction, the second electrode being disposed over the first electrode;
- and
- a write line electrode disposed between the first electrode and the second electrode.
1 more element
Dependencies are inferred from the claim text.