G11C 2013/0095
Write using strain induced by
Official title: {Write using strain induced by, e.g. piezoelectric, thermal effects}
G11C2013/0095 (Write using strain induced by) appears on 23 US grants and 27 published applications in this corpus.
Search patents in G11C- Granted patents
- 23
- Published applications
- 27
- Assignees
- 13
- Inventors
- 58
- Latest grant
- 19 Aug 2025
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| Year | Granted patents | Published applications |
|---|---|---|
| 2006 | 0 | 1 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 2 |
| 2011 | 1 | 0 |
| 2012 | 0 | 3 |
| 2013 | 1 | 3 |
| 2014 | 0 | 1 |
| 2015 | 4 | 3 |
| 2016 | 2 | 6 |
| 2017 | 5 | 1 |
| 2018 | 2 | 1 |
| 2019 | 2 | 2 |
| 2020 | 2 | 1 |
| 2021 | 1 | 0 |
| 2022 | 0 | 1 |
| 2023 | 1 | 0 |
| 2024 | 0 | 1 |
| 2025 | 1 | 0 |
By publication year.
Recent patents
- Piezoelectric memory19 Aug 2025US 12,396,376 B2International Business Machines Corporation
- Phase-change memory14 Nov 2023US 11,817,146 B2Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
- Semiconductor storage device, method of controlling semiconductor storage device, computer program product, and method of fabricating semiconductor storage device25 May 2021US 11,018,227 B2Kabushiki Kaisha Toshiba
- Tunable resistive element28 Jul 2020US 10,727,404 B1International Business Machines Corporation
- Symmetrically tunable electrical resistor14 Jul 2020US 10,714,242 B2International Business Machines Corporation
- Piezoelectric memory2 May 2024US 2024/0147873 A1International Business Machines Corporation
- Phase-change memory7 Jul 2022US 2022/0215878 A1Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
- Tunable Resistive Element23 Jul 2020US 2020/0235294 A1International Business Machines Corporation
- Semiconductor storage device, method of controlling semiconductor storage device, computer program product, and method of fabricating semiconductor storage device19 Sep 2019US 2019/0288072 A1Kabushiki Kaisha Toshiba
- Tunable electrical resistor20 Jun 2019US 2019/0189311 A1International Business Machines Corporation
Most cited
By later US patents
- Methods, structures, and devices for reducing operational energy in phase change memory7US 8,031,518 B2Micron Technology, Inc. · 2011
- Phase change memory featuring ferromagnetic layers in contact with phase change layer5US 7,667,222 B2Hitachi, Ltd. · 2010
- Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence5US 9,679,645 B2International Business Machines Corporation · 2017
- Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence4US 9,251,884 B2International Business Machines Corporation · 2016
- Symmetrically tunable electrical resistor3US 10,714,242 B2International Business Machines Corporation · 2020