Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
AssigneeInternational Business Machines Corporation
InventorsBruce G. Elmegreen, Glenn J. Martyna, Dennis M. Newns, Alejandro G. Schrott
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material.
Claims8
A multibit, nonvolatile memory storage device, comprising:
- a first ferroelectric (FE) material and a second FE material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the first FE material and second FE material, and arranged in a single stack, wherein an electrical resistance of the PR material is dependent upon on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the first FE material and the second FE material resulting from a polarization of the first FE material and a polarization of the second FE material such that the PR material is set to assume one of a first resistance value, a second resistance value, a third resistance value of the PR material, and a fourth resistance value.
Dependencies are inferred from the claim text.