Piezoelectric memory
AssigneeInternational Business Machines Corporation
InventorsGuy M. Cohen, Takashi Ando, Nanbo Gong
Life of this patent
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Abstract
A non-volatile memory apparatus includes a first hydrogen reservoir, which is electrically conductive; a charge of hydrogen, which is captured in the first hydrogen reservoir; a dielectric layer that has a first side that is adjacent to the first hydrogen reservoir and a second side that is opposite from the first hydrogen reservoir; a second hydrogen reservoir that is adjacent to the second side of the dielectric layer, is electrically conductive, and has a side that is opposite from the dielectric layer; and a piezoelectric layer that is adjacent to the side of the second hydrogen reservoir and that has a side that is opposite from the second hydrogen reservoir.
Claims20
A non-volatile memory apparatus that comprises:
- a first hydrogen reservoir, wherein the first hydrogen reservoir is electrically conductive;
- a charge of hydrogen, which is captured in the first hydrogen reservoir;
- a dielectric layer that has a first side that is adjacent to the first hydrogen reservoir and a second side that is opposite from the first hydrogen reservoir;
- a second hydrogen reservoir that is adjacent to the second side of the dielectric layer, wherein the second hydrogen reservoir is electrically conductive and has a side that is opposite from the dielectric layer;
- and
- a piezoelectric layer that is adjacent to the side of the second hydrogen reservoir and that has a side that is opposite from the second hydrogen reservoir.
A method for operating a non-volatile memory apparatus, which comprises first and second hydrogen reservoirs, a dielectric layer that partitions the hydrogen reservoirs, a piezoelectric layer that is adjacent to the second hydrogen reservoir, and a neutral layer that is at a side of the piezoelectric layer opposite from the second hydrogen reservoir, the method comprising:
- setting a high bit on the memory apparatus by inducing a strain on the piezoelectric layer, wherein inducing the strain comprises:
- moving hydrogen from the first hydrogen reservoir through the dielectric layer to the second hydrogen reservoir, wherein moving the hydrogen comprises:
- applying an electric field across the hydrogen reservoirs.
A piezoelectric memory apparatus comprising:
- a piezoelectric layer;
- programmable means for placing and removing a strain on the piezoelectric layer so as to store a value directly in the piezoelectric layer;
- and
- a readout circuit that is connected to the programmable means to read out the value stored directly in the piezoelectric layer.
A piezoelectric memory apparatus comprising:
- a piezoelectric layer;
- programmable means for placing and removing a strain on the piezoelectric layer;
- and
- a readout circuit that is connected to the programmable means;
- wherein the programmable means comprise a dielectric layer, a first hydrogen reservoir that is disposed at a first side of the dielectric layer, a second hydrogen reservoir that is disposed at a second side of the dielectric layer that is opposite from the first hydrogen reservoir and between the dielectric layer and the piezoelectric layer, and a charge of hydrogen in at least one of the hydrogen reservoirs.
Dependencies are inferred from the claim text.