Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence

A nonvolatile memory cell, comprising:

• a storage transistor coupled to an access transistor, the storage transistor comprising a first ferroelectric (FE) material coupled with a first piezoresistive (PR) material through an inherent piezoelectric response of the first FE material, wherein an electrical resistance of the first PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the first FE material resulting from a polarization of the first FE material, such that a polarized state of the first FE material results in a first resistance value of the first PR material, and a depolarized state of the FE material results in a second resistance value of the first PR material that is higher than the first resistance value, wherein the first FE material is disposed between first and second electrodes, and the first PR material is disposed between the second electrode and a third electrode;
• wherein the first FE material is polarized by initial application of a voltage across the first FE material to result in an initial polarization Ds, and thereafter by removal of the voltage to leave the first FE element with a remanent polarization Dr and a remanent strain Sr;
• wherein the first FE material is depolarized and the remanent strain removed by applying an alternating voltage of decreasing amplitude across the first FE material, and
• wherein the access transistor is formed in a single stack with the storage transistor, the access transistor further comprising a second FE material mechanically coupled to and electrically insulated from the first FE material, the second FE material disposed between fourth and fifth electrodes.