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US 7,667,222 B2Granted
Phase change memory featuring ferromagnetic layers in contact with phase change layer
AssigneeHitachi, Ltd.
InventorTomio Iwasaki
Life of this patent
Estimating the term…
Abstract
A phase change memory comprises a phase-change recording layer for recording information through changing between a crystal phase and an amorphous phase; and a means for applying a tensile strain onto the phase-change recording layer, thereby providing the memory having high reliability, as well as, high tolerance or durability against repetitive rewriting operation.
Claims12
A phase change memory, comprising:
- a phase-change recording layer for recording information through changing between a crystal phase and an amorphous phase;
- and
- a means for applying a tensile strain onto said phase-change recording layer;
- wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof;
- and
- wherein said means for applying a tensile strain is a Piezo element.
3 more elements
A phase change memory, comprising:
- a substrate;
- a dielectric layer formed on one main surface of said substrate;
- a first electrode formed in contact with said dielectric layer;
- and
- a phase-change recording layer formed in contact with said first electrode;
- a second electrode formed in contact with said phase-change recording layer, wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof, a main constituent material of said first electrode is TiSixNy or TaSixNy, Si density within said first electrode is equal or greater than 0.07 at. % and equal or less than 33 at. %, and a ferromagnetic layer is put between said first electrode and said second electrode in structure thereof.
3 more elements
A phase change memory, comprising:
- a substrate;
- a dielectric layer formed on one main surface of said substrate;
- a first electrode formed in contact with said dielectric layer;
- and
- a phase-change recording layer formed in contact with said first electrode;
- a second electrode formed in contact with said phase-change recording layer, wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof, a main constituent material of said first electrode is TiSixNy or TaSixNy, Si density within said first electrode is equal or greater than 0.07 at. % and equal or less than 33 at. %, a main constituent material of said dielectric layer is TiOxNy or TaOxNy or TaOxNy or TiSixOyNz or TaSixOyNz, and a ferromagnetic layer is put between said first electrode and said second electrode in structure thereof.
3 more elements
A phase change memory, comprising:
- a substrate;
- a dielectric layer formed on one main surface of said substrate;
- a first electrode formed in contact with said dielectric layer;
- and
- a phase-change recording layer formed in contact with said first electrode;
- a second electrode formed in contact with said phase-change recording layer, wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof, a main constituent material of said first electrode is TiSixNy or TaSixNy formed through a chemical vapor deposition method or a plating method, Si density within said first electrode is equal or greater than 0.07 at. % and equal or less than 33 at. %, a main constituent material of said dielectric layer is TiOxNy or TaOxNy or TaOxNy or TiSixOyNz or TaSixOyNz, and a ferromagnetic layer is put between said first electrode and said second electrode in structure thereof.
3 more elements
A phase change memory, comprising:
- a substrate;
- a dielectric layer formed on one main surface of said substrate;
- a first electrode formed in contact with said dielectric layer;
- and
- a phase-change recording layer formed in contact with said first electrode;
- a second electrode formed in contact with said phase-change recording layer, wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof, a main constituent material of said first electrode is TiSixNy or TaSixNy, Si density within said first electrode is equal or greater than 0.07 at. % and equal or less than 33 at. %, a main constituent material of said dielectric layer is TiOxNy or TaOxNy or TaOxNy or TiSixOyNz or TaSixOyNz, said second electrode is a layer, being formed through treating at least one of an oxidization process, a nitrization process and an oxidization/nitrization process thereon, and a ferromagnetic layer is put between said first electrode and said second electrode in structure thereof.
3 more elements
A phase change memory, comprising:
- a substrate;
- a dielectric layer formed on one main surface of said substrate;
- a first electrode formed in contact with said dielectric layer;
- and
- a phase-change recording layer formed in contact with said first electrode;
- a second electrode formed in contact with said phase-change recording layer, wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof, a main constituent material of said first electrode is TiSixNy or TaSixNy formed through a chemical vapor deposition method or a plating method, Si density within said first electrode is equal or greater than 0.07 at. % and equal or less than 33 at. %, a main constituent material of said dielectric layer is TiOxNy or TaOxNy or TaOxNy or TiSixOyNz or TaSixOyNz, said second electrode is a layer, being formed through treating at least one of an oxidization process, a nitrization process and an oxidization/nitrization process thereon, and a ferromagnetic layer is put between said first electrode and said second electrode in structure thereof.
3 more elements
A phase change memory, comprising:
- a substrate;
- a dielectric layer formed on one main surface of said substrate;
- a first electrode formed in contact with said dielectric layer;
- and
- a phase-change recording layer formed in contact with said first electrode;
- a second electrode formed in contact with said phase-change recording layer, wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof, said phase-change recording layer includes Zn as a constituent element thereof, a main constituent material of said first electrode is TiSixNy or TaSixNy, Si density within said first electrode is equal or greater than 0.07 at. % and equal or less than 33 at. %, and a ferromagnetic layer is put between said first electrode and said second electrode in structure thereof.
3 more elements
A phase change memory, comprising:
- a substrate;
- a dielectric layer formed on one main surface of said substrate;
- a first electrode formed in contact with said dielectric layer;
- and
- a phase-change recording layer formed in contact with said first electrode;
- a second electrode formed in contact with said phase-change recording layer, wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof, a main constituent material of said phase-change recording layer is ZnSbx Tey or ZnGexTey or ZnGexSbyTez or GeSbxTey, a main constituent material of said first electrode is TiSixNy or TaSixNy, Si density within said first electrode is equal or greater than 0.07 at. % and equal or less than 33 at. %, and a ferromagnetic layer is put between said first electrode and said second electrode in structure thereof.
3 more elements
A phase change memory, comprising:
- a substrate;
- a dielectric layer formed on one main surface of said substrate;
- a first electrode formed in contact with said dielectric layer;
- and
- a phase-change recording layer formed in contact with said first electrode;
- a second electrode formed in contact with said phase-change recording layer, wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof, a main constituent material of said phase-change recording layer is ZnSbxTey or ZnGexTey or ZnGexSbyTez or GeSbxTey, a main constituent material of said first electrode is TiSixNy or TaSixNy, Si density within said first electrode is equal or greater than 0.07 at. % and equal or less than 33 at. %, a main constituent material of said dielectric layer is TiOxNy or TaOxNy or TaOxNy or TiSixOyNz or TaSixOyNz, and a ferromagnetic layer is put between said first electrode and said second electrode in structure thereof.
3 more elements
A phase change memory, comprising:
- a substrate;
- a dielectric layer formed on one main surface of said substrate;
- a first electrode formed in contact with said dielectric layer;
- and
- a phase-change recording layer formed in contact with said first electrode;
- a second electrode formed in contact with said phase-change recording layer, wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof, a main constituent material of said phase-change recording layer is ZnSbxTey or ZnGexTey or ZnGexSbyTez or GeSbxTey, a main constituent material of said first electrode is TiSixNy or TaSixNy formed through a chemical vapor deposition method or a plating method, Si density within said first electrode is equal or greater than 0.07 at. % and equal or less than 33 at. %, a main constituent material of said dielectric layer is TiOxNy or TaOxNy or TaOxNy or TiSixOyNz or TaSixOyNz, and a ferromagnetic layer is put between said first electrode and said second electrode in structure thereof.
3 more elements
A phase change memory, comprising:
- a substrate;
- a dielectric layer formed on one main surface of said substrate;
- a first electrode formed in contact with said dielectric layer;
- and
- a phase-change recording layer formed in contact with said first electrode;
- a second electrode formed in contact with said phase-change recording layer, wherein said phase-change recording layer includes at least two selected from Ge, Sb and Te, as a constituent element thereof, a main constituent material of said phase-change recording layer is ZnSbxTey or ZnGexTey or ZnGexSbyTez or GeSbxTey, a main constituent material of said first electrode is TiSixNy or TaSixNy formed through a chemical vapor deposition method or a plating method, Si density within said first electrode is equal or greater than 0.07 at. % and equal or less than 33 at. %, a main constituent material of said dielectric layer is TiOxNy or TaOxNy or TaOxNy or TiSixOyNz or TaSixOyNz, said second electrode is a layer, being formed through treating at least one of an oxidization process, a nitrization process and an oxidization/nitrization process thereon, and a ferromagnetic layer is put between said first electrode and said second electrode in structure thereof.
3 more elements
Dependencies are inferred from the claim text.