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US 5,687,112 AGranted
Multibit single cell memory element having tapered contact
AssigneeEnergy Conversion Devices, Inc.
InventorStanford R. Ovshinsky
Life of this patent
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Abstract
An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance value, the second contact tapering to a peak adjacent to the memory element. In this manner the tapered contact helps define the size and position of a conduction path through the memory element.
Claims17
In an electrically operated, directly overwritable, multibit, single-cell memory element including:
- a volume of memory material defining a single cell memory element including at least one chalcogen element and at least one transition metal element and said memory material characterized by (1) a large dynamic range of electrical resistance values, and (2) the ability for at least a filamentary portion of said memory material to be set to one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single-cell memory element with multibit storage capabilities;
- at least a filamentary portion of said single cell memory element being setable, by said selected electrical signal to any resistance value in said dynamic range, regardless of the previous resistance value of said material;
- first and second spacedly disposed contacts for supplying said electrical input signal to set said memory material to a selected resistance value within said dynamic range;
- the improvement comprising, in combination:
- said second contact tapering to a peak adjacent said memory material.
2 more elements
Dependencies are inferred from the claim text.