G11C 2013/008
Write by generating heat in the surroundings of the memory material
Official title: {Write by generating heat in the surroundings of the memory material, e.g. thermowrite}
G11C2013/008 (Write by generating heat in the surroundings of the memory material) appears on 199 US grants and 218 published applications in this corpus.
Search patents in G11C- Granted patents
- 199
- Published applications
- 218
- Assignees
- 87
- Inventors
- 339
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 2 |
| 2004 | 1 | 5 |
| 2005 | 2 | 6 |
| 2006 | 4 | 10 |
| 2007 | 7 | 10 |
| 2008 | 3 | 12 |
| 2009 | 6 | 12 |
| 2010 | 19 | 5 |
| 2011 | 5 | 9 |
| 2012 | 10 | 10 |
| 2013 | 8 | 12 |
| 2014 | 14 | 8 |
| 2015 | 12 | 13 |
| 2016 | 12 | 10 |
| 2017 | 12 | 11 |
| 2018 | 11 | 10 |
| 2019 | 8 | 13 |
| 2020 | 11 | 14 |
| 2021 | 14 | 12 |
| 2022 | 9 | 11 |
| 2023 | 11 | 13 |
| 2024 | 10 | 3 |
| 2025 | 6 | 4 |
| 2026 | 3 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor memory device9 Jun 2026US 12,651,626 B2Korea Advanced Institute of Science and Technology
- Low loss multistate photonic memories6 Jan 2026US 12,518,824 B2The George Washington University
- Phase-change memory cell with asymmetric structure, a memory device including the phase-change memory cell, and a method for manufacturing the phase-change memory cell6 Jan 2026US 12,520,738 B2STMicroelectronics S,r.l.
- Phase change material switch circuit for enhanced signal isolation and methods of forming the same21 Oct 2025US 12,453,101 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-level programming of phase change memory device21 Oct 2025US 12,453,294 B2International Business Machines Corporation
- Phase change memory (pcm) cell with thermoelectric heating and cooling18 Jun 2026US 2026/0173776 A1International Business Machines Corporation
- Memory element for implementing multi-level and memory device comprising the same23 Apr 2026US 2026/0114190 A1Korea University Research and Business Foundation
- Integrated pcm driver5 Feb 2026US 2026/0033837 A1Murata Manufacturing Co., Ltd.
- Phase change material switch circuit for enhanced signal isolation and methods of forming the same13 Nov 2025US 2025/0351378 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Variable resistance nonvolatile storage device and method for driving variable resistance nonvolatile storage element30 Oct 2025US 2025/0336440 A1Nuvoton Technology Corporation Japan
Most cited
By later US patents
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Phase change memory cell with high read margin at low power operation199US 7,214,958 B2Infineon Technologies AG · 2007
- Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory178US 6,696,355 B2Ovonyx, Inc. · 2004
- Phase change memory devices, method for encoding, and methods for storing data143US 9,093,141 B2Intermec IP Corp. · 2015
- Multilevel phase-change memory element and operating method118US 7,254,059 B2Industrial Technology Research Institut · 2007