Semiconductor memory device

Abstract

Disclosed herein is a semiconductor memory device. Provided is the semiconductor memory device includes a first device layer storing thermal energy and a second device layer being made of a material whose electrical properties are changed by the thermal energy, wherein the first device layer stores thermal energy if a voltage is applied to the second device layer. Since the device is composed of a material that is changed electrical characteristics by heat and a material that stores heat, it may be read as a current applied to the read voltage without applying other refresh voltage. In addition, there is no leakage current flowing through the device depending on the characteristics of the device, so additional circuit elements such as transistors and selectors are not required. The device has a fast-switching mechanism but does not cause leakage current thereby not showing resistance drift due to repetitive switching.

Dependencies are inferred from the claim text.