Low loss multistate photonic memories
AssigneeThe George Washington University
InventorsMario Miscuglio, Volker J. Sorger
Life of this patent
Estimating the term…
Loading patent…
AssigneeThe George Washington University
InventorsMario Miscuglio, Volker J. Sorger
Estimating the term…
Multistate non-volatile photonic memory devices are disclosed. The photonic devices comprise phase change materials with broadband transparencies used to store discretized information with negligible losses in the 0 state. The photonic memories comprise multiple configurations for reading and writing multi-bit words. The reading mechanisms comprises schemes based on light-absorption (FIG. 1), shift in resonances of a cavity (ring resonator, photonic crystal; FIG. 2) or interferometric schemes (FIG. 3). The photonic memory devices employ multiple techniques for writing electrically (FIG. 4 and related performance) and/or all-optically (FIGS. 7-10). The optical writing can be performed with pulsed laser light coming either from free space or on-chip using dedicated writing lines and opportune drops.
A photonic memory optical device comprising:
A photonic memory optical device comprising:
A photonic memory optical device comprising:
A photonic memory optical device comprising:
A photonic memory optical device comprising:
A photonic memory optical device comprising:
A photonic memory optical device comprising:
A photonic memory device comprising:
A photonic memory device forming a Mach Zehnder Interferometer, comprising:
Dependencies are inferred from the claim text.