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US 6,696,355 B2Granted
Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory
AssigneeOvonyx, Inc.
InventorCharles Dennison
Life of this patent
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Abstract
The present invention relates to a process of forming a phase-change memory. A lower electrode is disposed in a first dielectric film. The lower electrode comprises an upper section and a lower section. The upper section extends beyond the first dielectric film. Resistivity in the upper section is higher than in the lower section. A second dielectric film is disposed over the first dielectric film and has an upper surface that is coplanar with the upper section at an upper surface.
Claims19
A process of forming a phase-change memory comprising:
- providing a phase-change memory cell substrate including a lower electrode in a first dielectric film, wherein the lower electrode comprises an upper section and a lower section;
- removing a portion of the first dielectric film to cause the upper section to form a prominence;
- and
- increasing the resistivity of said prominence.
1 more element
A process of forming a phase-change memory device comprising:
- providing a phase-change memory cell substrate including a lower electrode in a first dielectric film, wherein the lower electrode comprises an upper section and a lower section;
- removing a portion of the first dielectric film to cause the upper section to form a prominence;
- increasing the resistivity of said prominence;
- forming a second dielectric film over the prominence;
- removing a portion of the second dielectric film to expose an upper surface of the upper section;
- and
- forming a volume of phase-change memory material over the upper section.
4 more elements
Dependencies are inferred from the claim text.