G11C 2013/0073
Write using bi-directional cell biasing
Official title: {Write using bi-directional cell biasing}
G11C2013/0073 (Write using bi-directional cell biasing) appears on 725 US grants and 760 published applications in this corpus.
Search patents in G11C- Granted patents
- 725
- Published applications
- 760
- Assignees
- 164
- Inventors
- 1,069
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 2 |
| 2005 | 3 | 5 |
| 2006 | 5 | 6 |
| 2007 | 2 | 6 |
| 2008 | 5 | 8 |
| 2009 | 7 | 20 |
| 2010 | 10 | 29 |
| 2011 | 24 | 58 |
| 2012 | 51 | 78 |
| 2013 | 68 | 66 |
| 2014 | 60 | 65 |
| 2015 | 72 | 45 |
| 2016 | 74 | 54 |
| 2017 | 50 | 29 |
| 2018 | 37 | 37 |
| 2019 | 45 | 51 |
| 2020 | 43 | 35 |
| 2021 | 44 | 40 |
| 2022 | 33 | 47 |
| 2023 | 33 | 30 |
| 2024 | 23 | 20 |
| 2025 | 22 | 13 |
| 2026 | 9 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Breakdown mitigation for programmable resistance memory element25 Aug 2026US 12,718,858 B2SanDisk Technologies LLC
- Techniques for multi-level chalcogenide memory cell programming11 Aug 2026US 12,706,142 B2Micron Technology, Inc.
- Resistance change element, storage device, and neural network apparatus28 Apr 2026US 12,614,587 B2Kabushiki Kaisha Toshiba
- Optical property storage device and system using same28 Apr 2026US 12,614,588 B2Kookmin University Industry Academy Cooperation Foundation
- Pulse based multi-level cell programming7 Apr 2026US 12,597,450 B2Micron Technology, Inc.
- Pulse based multi-level cell programming6 Aug 2026US 2026/0229261 A1Micron Technology, Inc.
- Memory device2 Jul 2026US 2026/0188387 A1SK hynix Inc.
- Elemental composition tuning for chalcogenide based memory arranged in a plurality of decks2 Jul 2026US 2026/0190875 A1SK Hynix NAND Product Solutions Corp. (dba Solidigm)
- Three-state programming of memory cells11 Jun 2026US 2026/0162720 A1Micron Technology, Inc.
- 3d memory device and method of implementing multi-level memory using the same11 Jun 2026US 2026/0164678 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Memory structures and methods of making same269US 6,072,716 AMassachusetts Institute of Technology · 2000
- Method for switching the properties of perovskite materials used in thin film resistors247US 6,204,139 B1University of Houston · 2001
- Current driven memory cells having enhanced current and enhanced current symmetry137US 7,515,457 B2Grandis, Inc. · 2009
- Rectifying element for a crosspoint based memory array architecture134US 7,382,647 B1International Business Machines Corporation · 2008
- Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device106US 8,054,674 B2National Institute of Advanced Industrial Science and Technology · 2011