Elemental composition tuning for chalcogenide based memory arranged in a plurality of decks
AssigneeSK Hynix NAND Product Solutions Corp. (dba Solidigm)
InventorsJohn M. Nugent, Kumar R. Virwani, Fred Daniel Gealy
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Abstract
A memory device including a memory array comprising a plurality of decks, a respective deck comprising a plurality of memory cells, a respective memory cell comprising a storage element comprising a chalcogenide material; wherein a first deck of the plurality of decks comprises first memory cells with storage elements deposited at a first initial composition of a plurality of elements; and a second deck of the plurality of decks comprises second memory cells with storage elements deposited at a second initial composition of the plurality of elements.
Claims21
-20. (canceled)
A non-volatile memory device, comprising:
- a plurality of memory cells, each memory cell of the plurality of memory cells comprising a storage element comprising a first chalcogenide material;
- wherein the first chalcogenide material comprises:
- a base chalcogenide alloy comprising at least Ge, Sb, and a Group VI element;
- and
- a concentration of dopant, wherein the dopant comprises a Group III element, and wherein the concentration of the dopant in the chalcogenide material causes a reduction in mobility of at least one constituent element of the based chalcogenide alloy during program-erase cycling.
A memory cell, comprising:
- a storage element comprising a first chalcogenide material;
- wherein the first chalcogenide material comprises:
- a base chalcogenide alloy comprising at least Ge, Sb, and a Group VI element;
- and
- a concentration of dopant, wherein the dopant comprises a Group III element, and wherein the concentration of the dopant in the chalcogenide material causes a reduction in mobility of at least one constituent element of the based chalcogenide alloy during program-erase cycling.
Dependencies are inferred from the claim text.