Pulse based multi-level cell programming

A non-transitory computer-readable medium storing code, the code comprising instructions executable by one or more processors of a memory system to:

• apply, via a voltage program generator, a first pulse to a memory cell of a set of memory cells to store a first logic state of a plurality of logic states in the memory cell, wherein the set of memory cells are configured to store the plurality of logic states, each logic state corresponding to a respective threshold voltage;
• and
• apply, via the voltage program generator, a first quantity of pulses to the memory cell to store a second logic state of the plurality of logic states, wherein the second logic state corresponds to an intermediate threshold voltage between a first threshold voltage of the first logic state and a third threshold voltage of a third logic state of the plurality of logic states.

A method, comprising:

• applying, via a voltage program generator, a first pulse to a memory cell of a set of memory cells to store a first logic state of a plurality of logic states in the memory cell, wherein the set of memory cells are configured to store the plurality of logic states, each logic state corresponding to a respective threshold voltage;
• and
• applying, via the voltage program generator, a first quantity of pulses to the memory cell to store a second logic state of the plurality of logic states, wherein the second logic state corresponds to an intermediate threshold voltage between a first threshold voltage of the first logic state and a third threshold voltage of a third logic state of the plurality of logic states.